? semiconductor components industries, llc, 2012 january, 2012 ? rev. 8 1 publication order number: bzx84c2v4et1/d bzx84cxxxet1g series, szbzx84cxxxet1g series zener voltage regulators 225 mw sot ? 23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot ? 23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features ? 225 mw rating on fr ? 4 or fr ? 5 board ? zener breakdown voltage range ? 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (> 16 kv) per human body model ? peak power ? 225 w (8 x 20 s) ? aec ? q101 qualified and ppap capable ? sz prefix for automotive and other applications requiring unique site and control change requirements ? pb ? free packages are available* mechanical characteristics case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 ? c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v ? 0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l ? 25 ? c p pk 225 w total power dissipation on fr ? 5 board, (note 2) @ t a = 25 ? c derated above 25 ? c thermal resistance, junction ? to ? ambient p d r ja 225 1.8 556 mw mw/ ? c ? c/w total power dissipation on alumina substrate, (note 3) @ t a = 25 ? c derated above 25 ? c thermal resistance, junction ? to ? ambient p d r ja 300 2.4 417 mw mw/ ? c ? c/w junction and storage temperature range t j , t stg ? 65 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. nonrepetitive current pulse per figure 9. 2. fr ? 5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information sot ? 23 case 318 style 8 3 cathode 1 anode marking diagram http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. see specific marking information in the device marking column of the electrical characteristics table on page 3 of this data sheet. device marking information bzx84cxxxet1g sot ? 23 (pb ? free) 3,000 / tape & reel 1 xxx m bzx84cxxxet3g sot ? 23 (pb ? free) 10,000 / tape & reel xxx = device code m = date code* = pb ? free package *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location) szbzx84cxxxet1g sot ? 23 (pb ? free) 3,000 / tape & reel szbzx84cxxxet3g sot ? 23 (pb ? free) 10,000 / tape & reel
bzx84cxxxet1g series, szbzx84cxxxet1g series http://onsemi.com 2 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 ? c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz zener voltage regulator i f v i i r i zt v r v z v f
bzx84cxxxet1g series, szbzx84cxxxet1g series http://onsemi.com 3 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 ? c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) device* device marking v z1 (v) @i zt1 =5ma (note 4) z zt1 ( ) @ i zt1 = 5 ma v z2 (v) @i zt2 =1 ma (note 4) z zt2 ( ) @ i zt2 = 1 ma v z3 (v) @i zt3 =20 ma (note 4) z zt3 ( ) @ i zt3 = 20 ma max reverse leakage current vz (mv/k) @ i zt1 =5 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r (v) i r a @ min max bzx84c2v4et1g ba1 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1.0 ? 3.5 0 450 bzx84c2v7et1g ba2 2.5 2.7 2.9 100 1.9 2.4 600 3.0 3.6 50 20 1.0 ? 3.5 0 450 bzx84c3v0et1g ba3 2.8 3.0 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1.0 ? 3.5 0 450 bzx84c3v3et1g ba4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5.0 1.0 ? 3.5 0 450 bzx84c3v6et1g ba5 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 ? 3.5 0 450 bzx84c3v9et1g ba6 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 ? 3.5 ? 2.5 450 bzx84c4v3et1g ba7 4.0 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 ? 3.5 0 450 bzx84c4v7et1g ba9 4.4 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 ? 3.5 0.2 260 bzx84c5v1et1g bb1 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 ? 2.7 1.2 225 bzx84c5v6et1g bb2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 ? 2 2.5 200 bzx84c6v2et1g bb3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185 bzx84c6v8et1g bb4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155 bzx84c7v5et1g bb5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140 bzx84c8v2et1g bb6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135 bzx84c9v1et1g bb7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130 bzx84c10et1g bb8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130 bzx84c11et1g bb9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130 bzx84c12et1g bc1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130 bzx84c13et1g bc2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120 bzx84c15et1g bc3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110 bzx84c16et1g bc4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105 bzx84c18et1g bc5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100 BZX84C20ET1G bc6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85 bzx84c22et1g bc7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85 bzx84c24et1g bc8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80 device* device marking v z1 below @i zt1 =2ma z zt1 below @ i zt1 = 2 ma v z2 below @i zt2 = 0.1 ma z zt2 below @ i zt4 = 0.5 ma v z3 below @i zt3 =10ma z zt3 below @ i zt3 = 10 ma max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) @ v r = 0 f = 1 mhz min nom max min max min max v r (v) i r a @ min max bzx84c27et1g bc9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 bzx84c30et1g bd1 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 bzx84c33et1g bd2 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 bzx84c36et1g bd3 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 bzx84c39et1g bd4 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 bzx84c43et1g bk6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 bzx84c47et1g bd5 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40 bzx84c51et1g bd6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 bzx84c56et1g bd7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 bzx84c62et1g bd8 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 bzx84c68et1g bd9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 bzx84c75et1g be1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 4. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 ? c * include sz-prefix devices where applicable.
bzx84cxxxet1g series, szbzx84cxxxet1g series http://onsemi.com 4 typical characteristics vz , temperature coefficient (mv/ c) ? ? v z , nominal zener voltage (v) ? 3 ? 2 ? 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 ? c to +150 ? c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) ? ? 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 ? c to +150 ? c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) ? 1000 100 10 1 t j = 255c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 ? c 75 ? c 25 ? c 0 ? c typical t c values
bzx84cxxxet1g series, szbzx84cxxxet1g series http://onsemi.com 5 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 ? c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 i r , leakage current ( a) ? 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 ? c +25 ? c ? 55 ? c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v) 100 figure 9. 8 ? 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s t a = 25 ? c t a = 25 ? c
bzx84cxxxet1g series, szbzx84cxxxet1g series http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 ? ? ? ? style 8: pin 1. anode 2. no connection 3. cathode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bzx84c2v4et1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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